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july 2011 doc id 15340 rev 2 1/15 15 STL85N6F3 n-channel 60 v, 0.0057 , 19 a powerflat? 5x6 stripfet? power mosfet features extremely low on-resistance r ds(on) 100% avalanche tested applications switching applications description this n-channel enhancement mode power mosfet benefits from the latest refinement of stmicroelectronics' unique ?single feature size? strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. the result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. figure 1. internal schematic diagram type v dss r ds(on) max i d STL85N6F3 60 v < 0.0065 19 a (1) 1. the value is rated according r thj-pcb powerflat? 5x6 1 2 3 4 ! - 6 " o t t o m 6 i e w $ $ $ $ 3 3 3 ' 4 o p 6 i e w table 1. device summary order code marking package packaging STL85N6F3 85n6f3 powerflat? 5x6 tape and reel www.st.com
contents STL85N6F3 2/15 doc id 15340 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 STL85N6F3 electrical ratings doc id 15340 rev 2 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v gs gate-source voltage 20 v i d (1) 1. the value is rated according r thj-pcb drain current (continuous) at t c = 25c 19 a i d (1) drain current (continuous) at t c = 100c 12 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 76 a i d (3) drain current (continuous) at t c =25c 85 a i d (3) 3. the value is rated according r thj-c drain current (continuous) at t c = 100c 54 a p tot (1) total dissipation at t c = 25c 4 w p tot (3) total dissipation at t c = 25c 80 w derating factor 0.03 w/c t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case (drain) (steady state) 1.56 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10sec thermal resistance junction-ambient 31.3 c/w electrical characteristics STL85N6F3 4/15 doc id 15340 rev 2 2 electrical characteristics (t case =25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating @125c 10 100 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 200 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 8.5a 0.0057 0.0065 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f=1 mhz, v gs =0 - 3050 659 38 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =30 v, i d = 19 a v gs =10 v (see figure 14) - 49.8 14.6 12 - nc nc nc STL85N6F3 electrical characteristics doc id 15340 rev 2 5/15 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 30 v, i d = 9.5 a, r g = 4.7 , v gs = 10 v (see figure 13) - 21.8 14.3 38.4 7.1 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current - 19 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 76 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd = 19 a, v gs =0 - 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 19 a, di/dt = 100 a/s, v dd = 48 v, tj=150c - 53.6 120.1 4.5 ns nc a electrical characteristics STL85N6F3 6/15 doc id 15340 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n m s s m s 4 j ? # 4 c ? # 3 i n g l e p u l s e ! - v ) $ 6 $ 3 6 ! 6 6 ' 3 6 ! - v ) $ 6 ' 3 6 ! 6 $ 3 6 ! - v " 6 $ 3 3 4 * ? # n o r m ! - v 2 $ 3 o n ) $ ! / h m 6 ' 3 6 ! - v STL85N6F3 electrical characteristics doc id 15340 rev 2 7/15 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics 6 ' 3 1 g n # 6 6 $ $ 6 ) $ ! ! - v # 6 $ 3 6 p & |